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US5781
CMOS High Sensitivity Switch Preliminary Datasheet
* * * *
Features and Benefits
Chopper stabilized amplifier stage New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality, and cost
Applications
* * * * Solid state switch Limit switch Current limit Interrupter
Ordering Information
Part No. US5781 US5781 Temperature Suffix E L
ry a in im l re P
Package SO or UA SO or UA
Temperature Range -40C to 85C Extended -40C to 150C Automotive
Functional Diagram
Description
The US5781 is a unipolar Hall effect sensor IC fabricated from mixed signal CMOS technology. It incorporates advanced chopper stabilization techniques to provide accurate and stable magnetic switch points. There are many applications for this sensor in addition to those listed above. The design, specifications and performance have been optimized for applications of solid state switches. The output transistor will b switched on (BOP) in e the presence of a sufficiently strong South pole magnetic field facing the marked side of the package. Similarly, the output will be switched off (BRP) in the presence of a weaker South field and remain off with "0" field. The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be switched on (BOP) in the presence of a sufficiently strong North pole magnetic field subjected to the marked face.
V DD
Output
Voltage Regulator
Chopper
GND UA Package Pin 1 - V D D Pin 2 - GND Pin 3 - Output SO Package Pin 1 - VD D Pin 2 - Output Pin 3 - GND
Note: This is a static-sensitive device; please observe ESD precau tions. Reverse VDD protection is not included. For reverse voltage protection, a 100resistor in series with VDD is recommended.
US5781 CMOS High Sensitivity Switch
3901005781 Rev 1.7
7/23/01
Page 1
US5781
CMOS High Sensitivity Switch Preliminary Datasheet
US5781 Electrical Specifications
DC operating parameters: TA = -40 to 150oC, VDD = 12V DC (unless otherwise specified).
Parameter
Supply Voltage Supply Current Saturation Voltage Output Leakage Output Rise Time Output Fall Time
Symbol Test Conditions
VDD IDD VDS(on) IOFF tr tf Operating BBOP BMin
3.5 0.5
Typ
2.5 0.3 0.01 0.04 0.18
Max
24 5.0 0.5 5.0
Units
V mA V iA is is
US5781 Magnetic Specifications
Magnetic operating parameters: TA = -40 to 150oC, VDD =12 VDC (unless otherwise specified).
Parameter
Operating Point Release Point Hysteresis
Symbol Test Conditions
BOP BRP Bhys
Min
7.0 3.5 2.0
Typ
12.0 7.0 5.0
Max
15.0 10.0 7.0
Units
mT mT mT
Note: 1 mT = 10 Gauss.
Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function o r design. Melexis does not assume any liability arising from the use of any product or application of any product or circuit described herein.
US5781 CMOS High Sensitivity Switch
3901005781 Rev 1.7
7/23/01
Page 2
US5781
CMOS High Sensitivity Switch Preliminary Datasheet Performance Graphs
Typical Magnetic Switch Points versus Supply Voltage
14.0
Typical Magnetic Switch Points versus Temperature
5781
14
5781
Flux Density (mT)
12.0
12
BOP
Flux Density (mT)
BOP
10.0
9
BRP
8.0
6
BHyS
BRP
6.0 3
4.0 0 5 10 15 20 25 30
0 -40 0 40 80 120 150
Supply Voltage (V)
Temperature (C)
Min/Max Magnetic Switch Range Versus Temperature
16 14
Output Voltage versus Flux Density
30
5781
BOP Max
5781
V DD 24
Flux Density mV/mT
12 10
BRP Max
Output Voltage (V)
18 B OP
8 6 4
BOP Min
12
B RP 6
2 0
-40 -20 0 20 40 60
BRP Min
V out
0 80 100 120 140 -20 -10 0 10 20 30 40
Temperature C
Flux Density (mT)
US5781 CMOS High Sensitivity Switch
3901005781 Rev 1.7
7/23/01
Page 3
US5781
CMOS High Sensitivity Switch Preliminary Datasheet
Performance Graphs
Typical Supply Current versus Supply Voltage
5
Typical Saturation Voltage versus Temperature VDD = 12 V, I OUT = 20mA
5781
500
5781
4 TA = -40oC
400 VDS(ON)
Supply Current (mA)
3 TA = 25 oC
VDS(ON) (mV)
20 25 30
300
2 TA = 125oC
200
1
100
0 0 5 10 15
0 -40 0 40 80 120
o
160
200
Supply Voltage (V)
Temperature ( C)
Power Dissipation versus Temperature
500
Wave Soldering Parameters
All Devices All Devices
280
Package Power Dissipation (mW)
400
260
300
Solder Temperature (oC)
200
UA Package R JA =206oC/W
240
200
220
100 SO Package RJA =575oC/W 0 -40 0 40 80 120 160
200
0
5
10
15
20
25
30
Temperature ( oC)
Time in Wave Solder (Seconds)
US5781 CMOS High Sensitivity Switch
3901005781 Rev 1.7
7/23/01
Page 4
US5781
CMOS High Sensitivity Switch Preliminary Datasheet
Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage, which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be placed in less space. The small chip size also contributes to lower physical stress and less power consumption. Automotive and Severe Environment Protection Circuit
R1 100 VDD D1 Z1 C1 4.7nF RL 1.2K
Hall IC
Installation Comments
Consider temperature coefficients of Hall IC and magnetics, as well as air gap life time variations. Observe temperature limits during wave soldering.
Supply Voltage
OUT C2 4.7nF
VSS
Applications
If reverse supply protection is desired, use a resistor in series with the VDD pin. The resistor will limit the supply current (Fault), IDD, to 50 mA. For severe EMC conditions, use the application circuit on this page.
Two Wire Current Biasing Circuit I IN
ID D RL Iout
V DD
Absolute Maximum Ratings
Supply Voltage (Operating), VDD Supply Current (Fault), IDD Output Voltage, VOUT Output Current (Fault), IOUT Power Dissipation, PD Operating Temperature Range, T A Storage Temperature Range, T S Maximum Junction Temp, TJ ESD Sensitivity (All Pins)
US5781 CMOS High Sensitivity Switch
3.5V to 24V 50mA 3.5V to 24V 50mA 100mW -40 to 150C -65 to 150C 175C +/- 2KV
Rb
Hall IC
The resistors R b and R L can be used to bias the input current, Iin. Refer to the part specification for limiting values. This circuit will help in getting the precise ON and OFF currents desired. BRP = Ioff = (VD D / Rb + IDD ) B OP = Ion = (Ioff + VD D / RL )
3901005781 Rev 1.7
7/23/01
Page 5
US5781
CMOS High Sensitivity Switch Preliminary Datasheet
Physical Characteristics
1.60 1.40 4.30 3.90 2.64 2.34 45o Typical
UA Package Dimensions
5o Typical
UA Hall Plate / Chip Location
2.13 1.87 0.45 0.41
0.84 0.63
1.53 1.27
U57 * 115
0.48 0.43
3.20 2.80
45o Typical
Marked Surface All Dimensions in millimeters
1.75 1.55 0.38 Typical (see note 3)
0.20 0.00
0.41 0.35
1
2
3
NOTES: 1.) Controlling dimension: mm 2.) Leads must be free of flash and plating voids 3.) Do not bend leads within 1mm of lead to package interface. 4.) Package dimensions exclude molding flash 5.) Tolerance is 0.254mm unless otherwise specified
15.5 14.5
* MARKING: Line 1: 1st digit (U) 2nd and 3rd digits (57) Line 2: 1st digit (1) 2nd and 3rd digits(15)
= Supplier (Melexis) = Series (5780)
= Year (2001) = Week of Year
1.30 1.24
PINOUT: Pin 1 Pin 2 Pin 3
V DD GND Output
2.57 2.51
0.41 0.35
SOT-23 Package Dimensions
0.50 0.35 0.20 MIN
* MARKING: 1st & 2nd Digit (57) = Series (5780) 3rd Digit(1) = Year - 2001 Last Digits (04) = Week of Year
SOT-23 Hall Plate / Chip Location
3 Bottom View of Package
3.00 2.60
57104
2.10 1.70
*
1.80 1.50
chip 0.66 0.56 0.25 0.10
3.10 2.70 0.10 0.00
NOTES: 1.) Controlling dimension: mm 2.) Lead thickness after solder plating will be 0.254 mm maximum 3.) Package dimensions exclude molding flash 4.) The end flash shall not exceed 0.127mm on each side of package 5.) Tolerance is 0.254mm unless otherwise specified
0.95 0.85
2
1
1.55 1.45
0.90 0.70
1.30 1.00
PINOUT: Pin 1 Pin 2 Pin 3
V DD Output GND
For the latest version of this document, Go to our website at:
WWW.melexis.com
Or for additional information Contact Melexis Direct: Europe and Japan E-mail: sales_europe@melexis.com Phone: 011-32-13-670-780
US5781 CMOS High Sensitivity Switch
USA and rest of the world E-mail: sales_usa@melexis.com Phone: (603)-223-2362
3901005781 Rev 1.7 7/23/01 Page 6

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